6.7 Hardening Approaches at Different Design Levels

This paper presents a hybrid non-volatile (NV) SRAM cell with a new scheme for SEU tolerance. The proposed NVSRAM cell consists of a 6T SRAM core and a Resistive RAM (RRAM), made of a 1T and a Programmable Metallization Cell (PMC). The proposed cell has concurrent error detection (CED) and correction capabilities; CED is accomplished using a dual-rail checker, while correction is accomplished by utilizing the restore operation; data from the non-volatile memory element is copied back to the SRAM core. The dual-rail checker utilizes two XOR gates each made of 2 inverters and 2 ambipolar transistors, hence, it has a hybrid nature. Extensive simulation results are provided. The simulation results show that the proposed scheme is very efficient in terms of numerous figures of merit such as delay and circuit complexity and thus applicable to integrated circuits such as FPGAs requiring secure on-chip non-volatile storage (i.e. LUTs) for multi-context configurability. 12:30 End of session Lunch Break in Exhibition Area Sandwich lunch Time Label Presentation T tle Auth rs Source URL: https://www.date-conference.com/date14/conference/session/6.7